Inventor · Leuven, BE

Yangyin Chen

23Patents
6h-index
16Co-inventors
58Inventor score

Filing activity: Mar 30, 2016 → Dec 6, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9941299B1 Three-dimensional ferroelectric memory device and method of making thereof Physics 62 Active
US10038092B1 Three-level ferroelectric memory cell using band alignment engineering Electricity 33 Active
US9735202B1 Implementation of VMCO area switching cell to VBL architecture Electricity 15 Active
US9754665B2 Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer Physics 14 Active
US10559588B2 Three-dimensional flat inverse NAND memory device and method of making the same Physics 14 Active
US9768180B1 Methods and apparatus for three-dimensional nonvolatile memory Electricity 10 Active
US11037908B2 Bonded die assembly containing partially filled through-substrate via structures and methods for making the same Electricity 5 Active
US11094653B2 Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same Electricity 4 Active
US10109679B2 Wordline sidewall recess for integrating planar selector device Electricity 3 Active
US11348901B1 Interfacial tilt-resistant bonded assembly and methods for forming the same Electricity 3 Active
US10453861B1 Ferroelectric non-volatile memory Electricity 2 Active
US11869877B2 Bonded assembly including inter-die via structures and methods for making the same Electricity 2 Active
US11424215B2 Bonded assembly formed by hybrid wafer bonding using selectively deposited metal liners Electricity 2 Active
US10461095B2 Ferroelectric non-volatile memory Electricity 1 Active
US10734408B2 Ferroelectric non-volatile memory Electricity 1 Active
US10453862B1 Ferroelectric non-volatile memory Electricity 1 Active
US11239204B2 Bonded assembly containing laterally bonded bonding pads and methods of forming the same Electricity 0 Active
US10026782B2 Implementation of VMCO area switching cell to VBL architecture Electricity 0 Active
US12347804B2 Bonded assembly including interconnect-level bonding pads and methods of forming the same Electricity 0 Active
US9941331B1 Device with sub-minimum pitch and method of making Electricity 0 Active
US10756186B2 Three-dimensional memory device including germanium-containing vertical channels and method of making the same Electricity 0 Active
US11276705B2 Embedded bonded assembly and method for making the same Electricity 0 Active
US11430745B2 Semiconductor die containing silicon nitride stress compensating regions and method for making the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.