Method for fabricating semiconductor device
US10026827B2 · kind B2 · utility
2Cited by
0References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 10, 2016 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | May 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first organic layer on the substrate; patterning the first organic layer to form an opening; forming a second organic layer in the opening; and removing the first organic layer to form a patterned second organic layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.