Patent · US Active

Semiconductor device with isolated body portion

US10026829B2 · kind B2 · utility

6Cited by
5References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 16, 2017
Grant dateJul 17, 2018
Priority date
Expiry dateFeb 16, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/201
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.