Inventor · Portland, OR, US

Patrick H. Keys

22Patents
4h-index
49Co-inventors
63Inventor score

Filing activity: May 20, 2003 → Jun 23, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6936505B2 Method of forming a shallow junction Electricity 22 Expired
US9608059B2 Semiconductor device with isolated body portion Electricity 16 Active
US10790281B2 Stacked channel structures for MOSFETs Electricity 7 Active
US10026829B2 Semiconductor device with isolated body portion Electricity 6 Active
US10483385B2 Nanowire structures having wrap-around contacts Electricity 3 Active
US11404319B2 Vertically stacked finFETs and shared gate patterning Emerging Cross-Sectional Technologies 3 Active
US11107891B2 Hexagonal arrays for quantum dot devices Electricity 3 Active
US11183564B2 Quantum dot devices with strain control Electricity 1 Active
US10665770B2 Fin strain in quantum dot devices Electricity 1 Active
US10636907B2 Deep EPI enabled by backside reveal for stress enhancement and contact Electricity 0 Active
US11469299B2 Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers Electricity 0 Active
US12199098B2 Fin doping and integrated circuit structures resulting therefrom Electricity 0 Active
US10892326B2 Removal of a bottom-most nanowire from a nanowire device stack Electricity 0 Active
US11495683B2 Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material Electricity 0 Active
US10896907B2 Retrograde transistor doping by heterojunction materials Electricity 0 Active
US12100623B2 Vertically stacked finFETs and shared gate patterning Emerging Cross-Sectional Technologies 0 Active
US12230687B2 Lateral gate material arrangements for quantum dot devices Electricity 0 Active
US11527613B2 Removal of a bottom-most nanowire from a nanowire device stack Electricity 0 Active
US10978590B2 Methods and apparatus to remove epitaxial defects in semiconductors Electricity 0 Active
US10840366B2 Nanowire structures having wrap-around contacts Electricity 0 Active
US7790587B2 Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby Electricity 0 Active
US11757026B2 Nanowire structures having wrap-around contacts Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.