Patent · US Active

Optoelectronic device having semiconductor elements

US10026870B2 · kind B2 · utility

0Cited by
10References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 22, 2015
Grant dateJul 17, 2018
Priority date
Expiry dateJun 22, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/762
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An optoelectronic device including a substrate having a surface, openings which extend in the substrate from the surface, and semiconductor elements, each semiconductor element partially extending into one of the openings and partially outside said opening, the height of each opening being at least 25 nm and at most 5 μm and the ratio of the height to the smallest diameter of each opening being at least 0.5 and at most 15.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.