Magnetoresistive element
US10026891B2 · kind B2 · utility
8Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2016 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jul 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.