Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground
US10032608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2014 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Aug 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention relate to apparatus for improving uniformity and film stress of films deposited during plasma process of a substrate. According to embodiments, the apparatus includes a tuning electrode and/or a tuning ring electrically coupled to a variable capacitor for tuning high frequency RF impedance of the electrode and a low frequency RF termination to ground. The plasma profile and resulting film thickness can be controlled by adjusting the capacitance of the variable capacitor and the resulting impedance of the tuning electrode. The film stress of the film deposited on the substrate can be controlled, i.e., increased, by terminating the low frequency RF during processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.