Inventor · Fremont, CA, US

Jian J. Chen

34Patents
12h-index
42Co-inventors
81Inventor score

Filing activity: Sep 10, 1997 → Feb 13, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6583572B2 Inductive plasma processor including current sensor for plasma excitation coil Electricity 420 Expired
US10950477B2 Ceramic heater and esc with enhanced wafer edge performance Electricity 264 Active
US6063234A Temperature sensing system for use in a radio frequency environment Physics 258 Expired
US6164241A Multiple coil antenna for inductively-coupled plasma generation systems Electricity 135 Expired
US6463875B1 Multiple coil antenna for inductively-coupled plasma generation systems Electricity 64 Expired
US8587321B2 System and method for current-based plasma excursion detection Electricity 50 Active
US8502689B2 System and method for voltage-based plasma excursion detection Electricity 48 Active
US9157730B2 PECVD process Physics 46 Active
US6155199A Parallel-antenna transformer-coupled plasma generation system Electricity 39 Expired
US7096819B2 Inductive plasma processor having coil with plural windings and method of controlling plasma density Electricity 34 Expired
US7094315B2 Chamber configuration for confining a plasma Electricity 25 Expired
US6872281B1 Chamber configuration for confining a plasma Electricity 25 Expired
US6028286A Method for igniting a plasma inside a plasma processing reactor Electricity 10 Expired
US9458537B2 PECVD process Physics 8 Active
US9816187B2 PECVD process Physics 7 Active
US6527912B2 Stacked RF excitation coil for inductive plasma processor Electricity 3 Expired
US10125422B2 High impedance RF filter for heater with impedance tuning device Electricity 3 Active
US10032608B2 Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground Electricity 3 Active
US9865431B2 Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber Electricity 3 Active
US9386680B2 Detecting plasma arcs by monitoring RF reflected power in a plasma processing chamber Electricity 2 Active
US10347465B2 Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber Electricity 2 Active
US10128118B2 Bottom and side plasma tuning having closed loop control Electricity 2 Active
US10060032B2 PECVD process Physics 2 Active
US10793954B2 PECVD process Physics 2 Active
US10030306B2 PECVD apparatus and process Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.