Method of manufacturing semiconductor device by forming a film on a substrate, substrate processing apparatus, and recording medium
US10032626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2014 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Sep 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.