Method of fabricating mask pattern
US10032631B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | May 10, 2017 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | May 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a mask pattern includes providing numerous masks on a substrate. A wider trench and a narrower trench are respectively defined between the mask. Subsequently, a mask material is formed to fill in the wider trench and the narrower trench. The top surface of the mask material overlapping the wider trench is lower than the top surface of the mask material overlapping the narrower trench. A photoresist layer is formed on the mask material overlapping the wider trench. Later, the mask material overlapping the narrower trench is etched while the mask material overlapping the wider trench is protected by the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.