Fu-Che Lee
104Patents
4h-index
52Co-inventors
63Inventor score
Filing activity: Dec 20, 2016 → Dec 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10475794B1 | Semiconductor device and method for fabricating the same | Electricity | 10 | Active |
| US10043809B1 | Semiconductor device and method for fabricating the same | Electricity | 8 | Active |
| US10186513B2 | Semiconductor device and method of forming the same | Electricity | 4 | Active |
| US10373957B2 | Capacitor structure and fabrication method thereof | Electricity | 4 | Active |
| US10170362B2 | Semiconductor memory device with bit line contact structure and method of forming the same | Electricity | 4 | Active |
| US10312088B1 | Self-aligned double patterning method | Electricity | 4 | Active |
| US10217750B1 | Buried word line structure and method of making the same | Electricity | 4 | Active |
| US10147728B1 | Semiconductor device and method for fabricating the same | Electricity | 3 | Active |
| US10153165B1 | Patterning method | Electricity | 3 | Active |
| US10249629B1 | Method for forming buried word lines | Electricity | 3 | Active |
| US10497704B2 | Buried word line structure and method of making the same | Electricity | 3 | Active |
| US10818664B2 | Method of forming semiconductor memory device | Electricity | 2 | Active |
| US10784334B2 | Method of manufacturing a capacitor | Electricity | 2 | Active |
| US10147726B1 | Semiconductor device and method for fabricating the same | Electricity | 2 | Active |
| US10366993B2 | Semiconductor structure having air gap between gate electrode and distal end portion of active area | Electricity | 2 | Active |
| US10777559B1 | Semiconductor memory device and manufacturing method thereof | Electricity | 2 | Active |
| US10795255B2 | Method of forming layout definition of semiconductor device | Electricity | 2 | Active |
| US10354876B1 | Semiconductor device and method of forming the same | Electricity | 2 | Active |
| US10431679B2 | Semiconductor device and method for forming the same | Electricity | 2 | Active |
| US10062700B2 | Semiconductor storage device and manufacturing method thereof | Electricity | 2 | Active |
| US10381306B2 | Semiconductor memory device and a manufacturing method thereof | Electricity | 1 | Active |
| US10593677B2 | Semiconductor structure with capacitor landing pad and method of make the same | Electricity | 1 | Active |
| US10032631B1 | Method of fabricating mask pattern | Electricity | 1 | Active |
| US10854613B2 | Buried word line of a dynamic random access memory and method for fabricating the same | Electricity | 1 | Active |
| US10381239B2 | Method of forming semiconductor device | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.