Selective gas etching for self-aligned pattern transfer
US10032632B2 · kind B2 · utility
3Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2016 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Oct 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/49838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.