Image transfer using EUV lithographic structure and double patterning process
US10032633B1 · kind B1 · utility
2Cited by
14References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2017 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Jan 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An EUV lithographic structure includes an EUV photosensitive resist layer disposed on a hardmask layer, wherein the EUV lithographic structure is free of an antireflective coating. An organic adhesion layer can be provided between the hardmask layer and the EUV photosensitive resist layer. The hardmask layer can include an uppermost oxide hardmask layer, an intermediate hardmask layer, and a lowermost oxide hardmask layer, wherein the EUV photosensitive resist layer is disposed on the uppermost oxide hardmask layer. Also described are methods for patterning the EUV lithographic structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.