Chamferless via structures

US10032668B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• GlobalFoundries Inc. · KY

Inventors

• Mark L. Lenhardt · Schenectady, US
• Frank W. Mont · Troy, US
• Brown C. Peethala · Albany, US
• Shariq Siddiqui · Albany, US
• Jessica P. Striss · Schenectady, US
• Douglas M. Trickett · Altamont, US

Key dates

• Filing date: Jan 23, 2017
• Grant date: Jul 24, 2018
• Expiry date: Jan 23, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/528
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one self-aligned via within at least dielectric material; plugging the at least one self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.