Method for obtaining a bonding surface for direct bonding
US10032742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2014 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Dec 2, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for obtaining a bonding surface for direct bonding includes: a) providing a substrate based on a sintered metal having a base surface with an RMS roughness lower than 6 nanometers and a PV roughness lower than 100 nanometers; b) bombarding the base surface with ionic species; c) depositing a metal layer on the base surface; and d) carrying out a mechanical and/or chemical polish of an exposed surface of the metal layer. A structure including a substrate based on a sintered metal the base surface of which is at least partially formed from a metal including ionic species implanted by bombardment of the base surface, and a metal layer of identical chemical composition to that of the metal base substrate and including a bonding surface with an RMS roughness lower than 0.6 nanometers and a PV roughness lower than 10 nanometers is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.