Selective atomic layer deposition for gapfill using sacrificial underlayer

US10037884B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Fung Suong Ou · Palo Alto, US
• Purushottam Kumar · Hillsboro, US
• Adrien LaVoie · Newberg, US
• Ishtak Karim · Portland, US
• Jun Qian · Sunnyvale, US

Key dates

• Filing date: Aug 31, 2016
• Grant date: Jul 31, 2018
• Expiry date: Aug 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31122
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.