Jun Qian
118Patents
13h-index
174Co-inventors
89Inventor score
Filing activity: May 14, 1997 → Oct 31, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9257274B2 | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method | Electricity | 504 | Active |
| US9425078B2 | Inhibitor plasma mediated atomic layer deposition for seamless feature fill | Electricity | 434 | Active |
| US9997357B2 | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors | Electricity | 413 | Active |
| US9745658B2 | Chamber undercoat preparation method for low temperature ALD films | Chemistry; Metallurgy | 357 | Active |
| US9966299B2 | Inhibitor plasma mediated atomic layer deposition for seamless feature fill | Electricity | 348 | Active |
| US6135647A | System and method for representing a system level RTL design using HDL independent objects and translation to synthesizable RTL code | Physics | 47 | Expired |
| US10037884B2 | Selective atomic layer deposition for gapfill using sacrificial underlayer | Electricity | 25 | Active |
| US9793110B2 | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method | Electricity | 24 | Active |
| US10361076B2 | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method | Electricity | 15 | Active |
| US6211008A | Method for forming high-density high-capacity capacitor | Electricity | 14 | Expired |
| US9138860B2 | Closed-loop control for improved polishing pad profiles | Performing Operations; Transporting | 14 | Active |
| US10062563B2 | Selective atomic layer deposition with post-dose treatment | Electricity | 14 | Active |
| US9793096B2 | Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity | Electricity | 13 | Active |
| US5849351A | Water dispersible coating composition for fat-fried foods | Human Necessities | 13 | Expired |
| US5976607A | Water dispersible coating composition for fat-fried foods | Human Necessities | 11 | Expired |
| US10559468B2 | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors | Electricity | 11 | Active |
| US9797042B2 | Single ALD cycle thickness control in multi-station substrate deposition systems | Electricity | 10 | Active |
| US7840375B2 | Methods and apparatus for generating a library of spectra | Electricity | 9 | Active |
| US10339465B2 | Optimized decision tree based models | Physics | 9 | Active |
| US9617638B2 | Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system | Electricity | 8 | Active |
| US10679848B2 | Selective atomic layer deposition with post-dose treatment | Electricity | 8 | Active |
| US10566187B2 | Ultrathin atomic layer deposition film accuracy thickness control | Electricity | 8 | Active |
| US6928626B1 | System and method for modeling of circuit components | Physics | 8 | Expired |
| US7444198B2 | Determining physical property of substrate | Physics | 7 | Active |
| US9870917B2 | Variable temperature hardware and methods for reduction of wafer backside deposition | Electricity | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.