SGT MOSFET with adjustable CRSS and CISS
US10038089B2 · kind B2 · utility
2Cited by
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10Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 2, 2015 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Dec 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/517
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor power device includes a plurality of power transistor cells each having a trenched gate disposed in a gate trench opened in a semiconductor substrate wherein a plurality of the trenched gates further include a shielded bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed at a top portion of the gate trench by an inter-electrode insulation layer. At least one of the shielded bottom electrode is connected a source metal and at least one of the top electrodes in the gate trench is connected to a source metal of the power device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.