Mengyu Pan
6Patents
3h-index
11Co-inventors
50Inventor score
Filing activity: Nov 29, 2007 → Jul 29, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8053315B2 | Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer | Electricity | 8 | Active |
| US7585705B2 | Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop | Electricity | 5 | Active |
| US8084304B2 | Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop | Electricity | 4 | Active |
| US7728385B2 | Trench MOSFET with an ONO insulating layer sandwiched between an ESD protection module atop and a semiconductor substrate | Electricity | 2 | Active |
| US10038089B2 | SGT MOSFET with adjustable CRSS and CISS | Electricity | 2 | Active |
| US10923588B2 | SGT MOSFET with adjustable CRSS and CISS | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.