Germanium etching systems and methods
US10043674B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Aug 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32477
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a semiconductor processing chamber. The methods may include flowing effluents of the fluorine-containing precursor through apertures defined in a chamber component. The apertures may be coated with a catalytic material. The methods may include reducing a concentration of fluorine radicals in the plasma effluents with the catalytic material. The methods may also include delivering the plasma effluents to a processing region of the semiconductor processing chamber. A substrate having an exposed region of a germanium-containing material may be housed within the processing region. The methods may further include etching the germanium-containing material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.