Structure and method for capping cobalt contacts
US10043708B2 · kind B2 · utility
2Cited by
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14Claims
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Key dates
| Filing date | Nov 9, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Nov 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a conductive structure includes the formation of a self-aligned silicide cap over a cobalt-based contact. The silicide cap is formed in situ by the deposition of a thin silicon layer over exposed portions of a cobalt contact, followed by heat treatment to react the deposited silicon with the cobalt and form cobalt silicide, which is an effective barrier to cobalt migration and oxidation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.