Methods for thermally forming a selective cobalt layer

US10043709B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Hua Ai · Tracy, US
• Jiang Lu · Zhanjiang, CN
• Avgerinos V. Gelatos · Scotts Valley, US
• Paul F. Ma · Santa Clara, US
• Sang Ho Yu · Cupertino, US
• Feng Q. Liu · San Jose, US
• Xinyu Fu · Pleasanton, US
• Weifeng YE · San Jose, US

Key dates

• Filing date: Nov 3, 2015
• Grant date: Aug 7, 2018
• Expiry date: Nov 3, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.