Method of fabricating semiconductor device
US10043718B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Aug 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes the following steps: providing a semiconductor substrate having a fin structure thereon; forming a recess in the fin structure so that the semiconductor substrate is partially exposed from the bottom surface of the recess; forming a dopant source layer conformally disposed on side surfaces and a bottom surface of the recess; removing the dopant source layer disposed on the bottom surface of the recess until portions of the semiconductor substrate are exposed from the bottom surface of the recess; and annealing the dopant source layer so as to form a side doped region in the fin structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.