Semiconductor device and method of manufacture thereof

US10043768B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thorsten Meyer · Regensburg, DE
• Ludwig Heitzer · Regensburg, DE

Key dates

• Filing date: May 12, 2015
• Grant date: Aug 7, 2018
• Expiry date: May 12, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line.