Electronic device including transistor and method for fabricating the same
US10043854B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 16, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Oct 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device includes a transistor. The transistor includes: a substrate including an active region that extends in a first direction; a gate structure disposed in the substrate and crossing the active region in a second direction that crosses the first direction; recesses disposed in the active region on two sides of the gate structure in the first direction, a center of a bottom surface of a first recess being more depressed in a third direction than two edges of the bottom surface along the first direction, the third direction being perpendicular to the first and second directions; an insulating layer disposed in the first recess; and a junction layer disposed over the insulating layer in the first recess in the third direction, a top surface of the insulating layer being below the two edges of the bottom surface and having a smaller curvature than the bottom surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.