Jong-Han Shin
31Patents
5h-index
22Co-inventors
69Inventor score
Filing activity: Aug 31, 1994 → May 30, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5633989A | Artificial neural circuit using pulse coding | Physics | 10 | Expired |
| US8105902B2 | Semiconductor device with vertical transistor and method for fabricating the same | Electricity | 9 | Active |
| US8404543B2 | Method for fabricating semiconductor device with buried gate | Electricity | 7 | Active |
| US8247324B2 | Semiconductor device with buried gate and method for fabricating the same | Electricity | 7 | Active |
| US8492257B2 | Semiconductor device with vertical transistor and method for fabricating the same | Electricity | 6 | Active |
| US8623727B2 | Method for fabricating semiconductor device with buried gate | Electricity | 5 | Active |
| US7981797B2 | Phase-change random access memory device and method of manufacturing the same | Electricity | 4 | Active |
| US7871913B2 | Method for manufacturing semiconductor device having vertical transistor | Electricity | 4 | Active |
| US8357600B2 | Method for fabricating buried gate using pre landing plugs | Electricity | 4 | Active |
| US10043854B1 | Electronic device including transistor and method for fabricating the same | Electricity | 4 | Active |
| US8039347B2 | Semiconductor device having vertically aligned pillar structures that have flat side surfaces and method for manufacturing the same | Electricity | 4 | Active |
| US7994056B2 | Method for forming pattern in semiconductor device | Electricity | 3 | Active |
| US7538007B2 | Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same | Electricity | 2 | Expired |
| US9331267B2 | Electronic device having buried gate and method for fabricating the same | Physics | 2 | Active |
| US7045450B2 | Method of manufacturing semiconductor device | Electricity | 2 | Expired |
| US9159732B2 | Semiconductor device with buried gate and method for fabricating the same | Electricity | 1 | Active |
| US8598012B2 | Method for fabricating semiconductor device with buried gates | Electricity | 1 | Active |
| US8975173B2 | Semiconductor device with buried gate and method for fabricating the same | Electricity | 1 | Active |
| US7507657B2 | Method for fabricating storage node contact in semiconductor device | Electricity | 1 | Active |
| US10559422B2 | Electronic device and method for fabricating the same using treatment with nitrogen and hydrogen | Electricity | 0 | Active |
| US10333060B2 | Electronic device and method for fabricating the same | Electricity | 0 | Active |
| US9640626B2 | Semiconductor device with buried gates and bit line contacting peripheral gate | Electricity | 0 | Active |
| US9842881B2 | Electronic device including metal-insulator-semiconductor structure and method for fabricating the same | Electricity | 0 | Active |
| US9257436B2 | Semiconductor device with buried gates and fabrication method thereof | Electricity | 0 | Active |
| US6939759B2 | Method for manufacturing capacitor of semiconductor device | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.