Method for forming a semiconductor structure
US10043888B2 · kind B2 · utility
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4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Dec 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor structure includes the following steps. First, a preliminary structure is provided. The preliminary structure includes a substrate and a plurality of fins formed on the substrate. Then, a first polysilicon layer is formed on the substrate. The first polysilicon layer covers at least portions of the fins. An amorphous silicon layer is formed on the first polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.