Keng-Jen Lin
16Patents
5h-index
30Co-inventors
62Inventor score
Filing activity: Mar 25, 2010 → Sep 27, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9847247B2 | Method for filling gaps of semiconductor device and semiconductor device formed by the same | Electricity | 268 | Active |
| US9793174B1 | FinFET device on silicon-on-insulator and method of forming the same | Electricity | 13 | Active |
| US9418853B1 | Method for forming a stacked layer structure | Electricity | 10 | Active |
| US9130014B2 | Method for fabricating shallow trench isolation structure | Electricity | 5 | Active |
| US9685319B2 | Method for filling gaps of semiconductor device and semiconductor device formed by the same | Electricity | 5 | Active |
| US9356125B1 | Manufacturing method of semiconductor structure | Electricity | 4 | Active |
| US10347640B1 | Method for forming semiconductor device | Electricity | 3 | Active |
| US8513519B2 | Use of exfoliated clay nanoplatelets and method for encapsulating cations | Emerging Cross-Sectional Technologies | 1 | Active |
| US9570578B2 | Gate and gate forming process | Electricity | 1 | Active |
| US9117878B2 | Method for manufacturing shallow trench isolation | Electricity | 1 | Active |
| US10366991B1 | Semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US8293034B2 | Lead-free brass alloy | Chemistry; Metallurgy | 0 | Active |
| US10460925B2 | Method for processing semiconductor device | Electricity | 0 | Active |
| US10043888B2 | Method for forming a semiconductor structure | Electricity | 0 | Active |
| US9543408B1 | Method of forming patterned hard mask layer | Electricity | 0 | Active |
| US11990547B2 | Semiconductor device and method for fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.