Oxide semiconductor device and method of manufacturing the same
US10043917B2 · kind B2 · utility
0Cited by
22References
8Claims
0Family size
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Key dates
| Filing date | Mar 3, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jun 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, agate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.