Chi-Fa Ku
32Patents
5h-index
26Co-inventors
69Inventor score
Filing activity: Jan 16, 1997 → Sep 13, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6025206A | Method for detecting defects | Electricity | 25 | Expired |
| US9064719B1 | Integrated circuit and method of forming integrated circuit | Electricity | 14 | Active |
| US9564217B1 | Semiconductor memory device having integrated DOSRAM and NOSRAM | Electricity | 11 | Active |
| US9431441B1 | Image sensor pixel structure | Electricity | 8 | Active |
| US5773082A | Method for applying photoresist on wafer | Physics | 7 | Expired |
| US9412734B2 | Structure with inductor and MIM capacitor | Electricity | 4 | Active |
| US9627549B1 | Semiconductor transistor device and method for fabricating the same | Electricity | 2 | Active |
| US9893066B2 | Semiconductor transistor device and method for fabricating the same | Electricity | 1 | Active |
| US9305994B2 | Semiconductor apparatus with multi-layer capacitance structure | Electricity | 1 | Active |
| US6136665A | Method for forming a recess-free buffer layer | Electricity | 1 | Expired |
| US9966428B2 | Capacitor and fabrication method thereof | Electricity | 1 | Active |
| US6304387A | Method of predicting the curvature radius of the microlens | Performing Operations; Transporting | 1 | Expired |
| US6422246B1 | Method removing residual photoresist | Physics | 1 | Expired |
| US9627547B2 | Semiconductor structure | Electricity | 1 | Active |
| US9607123B2 | Method for performing deep n-typed well-correlated (DNW-correlated) antenna rule check of integrated circuit and semiconductor structure complying with DNW-correlated antenna rule | Electricity | 1 | Active |
| US6283134A | Apparatus for removing photo-resist | Emerging Cross-Sectional Technologies | 1 | Expired |
| US9455351B1 | Oxide semiconductor field effect transistor device and method for manufacturing the same | Electricity | 1 | Active |
| US6153360A | Method of removing photo-resist | Emerging Cross-Sectional Technologies | 1 | Expired |
| US10043917B2 | Oxide semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US9349873B1 | Oxide semiconductor device and method of fabricating the same | Electricity | 0 | Active |
| US10644166B2 | Method for forming semiconductor structure | Electricity | 0 | Active |
| US9887293B2 | Semiconductor device | Electricity | 0 | Active |
| US9577029B2 | Metal-insulator-metal capacitor structure and method for manufacturing the same | Electricity | 0 | Active |
| US11011649B2 | Oxide semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US9530834B1 | Capacitor and method for fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.