Patent · US Active

Method for thinning substrates

US10049914B2 · kind B2 · utility

0Cited by

1References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roland Rupp · Achern, DE
Hans-Joachim Schulze · Taufkirchen, DE
Francisco Javier Santos Rodriguez · Villach, AT
Iris Moder · Villach, AT
Ingo Muri · Villach, AT

Key dates

Filing date	Nov 20, 2015
Grant date	Aug 14, 2018
Priority date	—
Expiry date	Jan 6, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/324
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to various embodiments, a method may include: providing a substrate having a first side and a second side opposite the first side; forming a buried layer at least one of in or over the substrate by processing the first side of the substrate; thinning the substrate from the second side of the substrate, wherein the buried layer includes a solid state compound having a greater resistance to the thinning than the substrate and wherein the thinning stops at the buried layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.