High voltage integration for HKMG technology
US10050033B1 · kind B1 · utility
13Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Sep 13, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Sep 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
The present disclosure relates to an integrated circuit (IC) and a method of formation. In some embodiments, a first oxide component is disposed on a substrate within a medium voltage region. A first high-k dielectric component is disposed on the substrate within a low voltage region and a second high-k dielectric component disposed on the first oxide component within the medium voltage region. A first gate electrode separates from the substrate by the first high-k dielectric component. A second gate electrode separates from the substrate by the first oxide component and the second high-k dielectric component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.