Semiconductor device with metal gate memory device and metal gate logic device and method for manufacturing the same
US10050050B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Nov 8, 2013 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Jan 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes a substrate, at least one split gate memory device, and at least one logic device. The split gate memory device is disposed on the substrate. The logic device is disposed on the substrate. A select gate or a main gate of the split gate memory device and a logic gate of the logic device are both made of metal, and the other gate of the split gate memory device is made of nonmetal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.