Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions
US10050113B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Feb 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
Abstract
A semiconductor device includes needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a transistor cell area. A grid structure separates the transistor sections from each other. The grid structure includes: stripe-shaped gate edge portions extending along one edge of the transistor sections, respectively; gate node portions wider than the gate edge portions and connecting two or more of the gate edge portions, respectively; and one or more connection sections of the semiconductor portion, wherein the one or more connection sections extend between neighboring transistor sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.