Methods, apparatus and system for screening process splits for technology development
US10054630B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 16, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Jun 16, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2623
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
At least one method and system involves performing a time-dependent dielectric breakdown (TDDB) test and a bias temperature instability (BTI) test on a device. A device having at least one transistor and at least one dielectric layer is provided. A test signal is provided for performing a TDDB test and a BTI test on the device. The TDDB test and the BTI test are performed substantially simultaneously on the device based upon the test signal. The data relating to a breakdown of the dielectric layer and at least one characteristic of the transistor based upon the TDDB test and the BTI test is acquired, stored, and/or transmitted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.