Post spacer self-aligned cuts

US10056291B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Shao Beng Law · Watervliet, US
• Xunyuan Zhang · Albany, US
• Frank W. Mont · Troy, US
• Genevieve Beique · Clifton Park, US
• Lei Sun · Beijing, CN

Key dates

• Filing date: Nov 23, 2016
• Grant date: Aug 21, 2018
• Expiry date: Nov 23, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76816
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to post spacer self-aligned cut structures and methods of manufacture. The method includes: providing a non-mandrel cut; providing a mandrel cut; forming blocking material on underlying conductive material in the non-mandrel cut and the mandrel cut; forming trenches with the blocking material acting as a blocking mask at the mandrel cut and the non-mandrel cut; and filling the trenches with metallization features such that the metallization features have a tip to tip alignment.