Self-rectifying RRAM cell structure having two resistive switching layers with different bandgaps and RRAM 3D crossbar array architecture
US10056432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2015 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Jun 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
The present disclosure provides a self-rectifying RRAM cell structure including a first electrode layer formed of a nitride of a first metal element, a second electrode layer formed of a second metal element that is different from the first metal element, a first resistive switching layer and a second resistive switching layer. The first resistive switching layer is sandwiched between the first electrode layer and the second resistive switching layer, and the second resistive switching layer is sandwiched between the first resistive switching layer and the second electrode layer. The first resistive switching layer has a first bandgap that is lower than the second bandgap of the second resistive switching layer. Furthermore, a RRAM 3D crossbar array architecture is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.