Semiconductor device
US10056493B2 · kind B2 · utility
0Cited by
8References
9Claims
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Key dates
| Filing date | Dec 25, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Dec 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/696
Abstract
A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a first dielectric layer covering on the oxide-semiconductor layer and the source/drain regions, a second gate between the two source/drain regions and partially covering the oxide-semiconductor layer, and a charge storage structure between the first gate electrode and the oxide-semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.