Patent · US Active

Method and apparatus for analyzing and for removing a defect of an EUV photomask

US10060947B2 · kind B2 · utility

3Cited by

6References

25Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Michael Budach · Hanau, DE
Tristan Bret · Darmstadt, DE
Klaus Edinger · Lorsch, DE
Thorsten Hofmann · Rodgau, DE

Key dates

Filing date	Dec 20, 2013
Grant date	Aug 28, 2018
Priority date	—
Expiry date	Dec 20, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/86
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) com-bining the first, the second and the third data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.