Patterning method and patterning apparatus for fabricating a resist pattern
US10061215B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 14, 2016 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Jul 16, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7088
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method for fabricating a resist pattern, a substrate coated with a photo resist is loaded on a stage of an exposure apparatus. Underlying patterns are fabricated on the substrate. A surface slope of an exposure area on the substrate is measured. An alignment measurement is performed by detecting an alignment pattern formed in the underlying patterns. An alignment measurement result is corrected based on the measured surface slope. The substrate is aligned to a photo mask by using the corrected alignment measurement result. The photo resist is exposed to radiation passing through the photo mask to form patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.