Multi channel semiconductor device having multi dies and operation method thereof
US10062430B2 · kind B2 · utility
3Cited by
16References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 6, 2018 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Feb 6, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/105
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi channel semiconductor device may include a substrate, a first die on the substrate and having a first channel to function as a first chip; and a second die on the substrate and having a second channel different from the first channel to function as a second chip and including the same storage capacity and physical size as the first die. An internal interface is disposed between the first and second dies. The internal interface is configured to transmit information for controlling internal operations of the first and second dies and first applied to a first recipient die of the first and second dies to the other die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.