Inventor · Hwaseong-si, KR

Yoon-Joo Eom

18Patents
4h-index
22Co-inventors
56Inventor score

Filing activity: Sep 12, 2012 → Oct 24, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10255969B2 Multi channel semiconductor device having multi dies and operation method thereof Physics 43 Active
US10361699B2 Memory modules, memory systems including the same, and methods of calibrating multi-die impedance of the memory modules Physics 19 Active
US9105317B2 Memory system capable of calibrating output voltage level of semiconductor memory device and method of calibrating output voltage level of semiconductor memory device Physics 7 Active
US9183902B2 Input data alignment circuit and semiconductor device including the same Physics 6 Active
US9899075B2 Multi channel semiconductor device having multi dies and operation method thereof Physics 4 Active
US9209764B2 Small signal receiver and integrated circuit including the same Electricity 3 Active
US10062430B2 Multi channel semiconductor device having multi dies and operation method thereof Physics 3 Active
US11195571B2 Memory device and method with data input Physics 2 Active
US9196325B2 Integrated circuit with on die termination and reference voltage generation and methods of using the same Physics 2 Active
US10666467B2 Memory device and operation method thereof Physics 1 Active
US9030262B2 Input receiver circuit having single-to-differential amplifier, and semiconductor device including the same Electricity 1 Active
US9355706B2 Output circuit for implementing high speed data transmition Physics 0 Active
US9742355B2 Buffer circuit robust to variation of reference voltage signal Electricity 0 Active
US11721391B2 Multi channel semiconductor device having multi dies and operation method thereof Physics 0 Active
US11443794B2 Multi channel semiconductor device having multi dies and operation method thereof Physics 0 Active
US11862234B2 Memory device and operation method thereof Physics 0 Active
US8934317B2 Semiconductor memory devices having internal clock signals and memory systems including such memory devices Physics 0 Active
US12154616B2 Memory device and operation method thereof Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.