Selective atomic layer deposition with post-dose treatment

US10062563B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Purushottam Kumar · Hillsboro, US
• Adrien LaVoie · Newberg, US
• Ishtak Karim · Portland, US
• Jun Qian · Sunnyvale, US
• Frank L. Pasquale · Beaverton, US
• Bart J. van Schravendijk · Sunnyvale, US

Key dates

• Filing date: Jul 1, 2016
• Grant date: Aug 28, 2018
• Expiry date: Jul 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.