SOI integrated circuit equipped with a device for protecting against electrostatic discharges

US10062681B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• STMicroelectronics SA
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Yohann Solaro · Grenoble, FR
• Sorin Cristoloveanu · Seyssinet-Pariset, FR
• Claire Fenouillet-Beranger · Grenoble, FR
• Pascal Fonteneau · Theys, FR

Key dates

• Filing date: May 10, 2017
• Grant date: Aug 28, 2018
• Expiry date: May 10, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A protection device for protecting an IC against electrostatic discharge includes a buried insulant layer having a thickness that is no greater than fifty nanometers with bipolar transistors arranged thereon, one of which is NPN and the other of which is PNP. A base of one merges with a collector of the other. The transistors selectively conduct a discharge current between electrodes. A first semiconductor ground plane under the buried insulant layer is capable of being electrically biased and extends underneath the base of the first bipolar transistor. The ground plane and a base of one transistor have the same doping. However, its dopant density is at least tenfold greater than that of the base.