Method and apparatus for selectively forming nitride caps on metal gate
US10062763B2 · kind B2 · utility
5Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2015 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | May 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sacrificial cap is grown on an upper surface of a conductor. A dielectric spacer is against a side of the conductor. An upper dielectric side spacer is formed on a sidewall of the sacrificial cap. The sacrificial cap is selectively etched, leaving a cap recess, and the upper dielectric side spacer facing the cap recess. Silicon nitride is filled in the cap recess, to form a center cap and a protective cap having center cap and the upper dielectric spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.