Preventing bridge formation between replacement gate and source/drain region through STI structure
US10062772B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2016 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Nov 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming at least one fin above a semiconductor substrate. An isolation structure is formed adjacent the fin. A liner layer is formed above the isolation structure adjacent an interface between the fin and the isolation structure. The liner layer includes a material different than the isolation structure. A sacrificial gate structure is formed above a portion of the fin and includes a sacrificial gate insulation layer and a sacrificial gate structure. The sacrificial gate structure is removed. The sacrificial gate insulation layer is removed selectively to the liner layer. A replacement gate structure is formed above a portion of the fin in a cavity defined by removing the sacrificial gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.