Method of bonding supporting substrate with device substrate for fabricating semiconductor device
US10068775B2 · kind B2 · utility
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6References
28Claims
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Key dates
| Filing date | Aug 10, 2016 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Aug 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes three steps of a providing step, a bonding step, and a thinning step. In the providing step, a mitigation layer that mitigates warping of the device substrate being thinned by grinding is provided on the supporting substrate. In the bonding step, the device substrate is bonded to the supporting substrate on which the mitigation layer is provided. In the thinning step, the device substrate supported by the supporting substrate is thinned by grinding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.