Multiple Fin heights with dielectric isolation
US10068810B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2017 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Sep 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming semiconductor fins having different fin heights and which are dielectrically isolated from an underlying semiconductor substrate. The fins may be formed by etching an active epitaxial layer that is disposed over the substrate. An intervening sacrificial epitaxial layer may be used to template growth of the active epitaxial layer, and is then removed and backfilled with an isolation dielectric layer. The isolation dielectric layer may be disposed between bottom surfaces of the fins and the substrate, and may be deposited, for example, following the etching process used to define the fins. Within different regions of the substrate, dielectrically isolated fins of different heights may have substantially co-planar top surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.