Inventor · Niskayuna, NY, US

Yi Qi

48Patents
9h-index
82Co-inventors
70Inventor score

Filing activity: Feb 16, 2011 → Feb 27, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US8439708B2 Electrical connector with cantilevered arm integrally formed on metal shell Electricity 21 Active
US10163635B1 Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related method Electricity 17 Active
US10217846B1 Vertical field effect transistor formation with critical dimension control Electricity 14 Active
US8152566B1 Electrical connector with resilient arm configured in fixed ended beam manner formed on metal shell Electricity 14 Active
US9397200B2 Methods of forming 3D devices with dielectric isolation and a strained channel region Electricity 12 Active
US9524908B2 Methods of removing portions of fins by preforming a selectively etchable material in the substrate Electricity 11 Active
US10170473B1 Forming long channel FinFET with short channel vertical FinFET and related integrated circuit Electricity 11 Active
US9123627B1 Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor device Electricity 10 Active
US9887094B1 Methods of forming EPI semiconductor material on the source/drain regions of a FinFET device Electricity 10 Active
US9431539B2 Dual-strained nanowire and FinFET devices with dielectric isolation Electricity 9 Active
US10249538B1 Method of forming vertical field effect transistors with different gate lengths and a resulting structure Electricity 8 Active
US10446483B2 Metal-insulator-metal capacitors with enlarged contact areas Electricity 7 Active
US10559656B2 Wrap-all-around contact for nanosheet-FET and method of forming same Electricity 6 Active
US10381459B2 Transistors with H-shaped or U-shaped channels and method for forming the same Electricity 6 Active
US9224605B2 Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation process Electricity 5 Active
US10068810B1 Multiple Fin heights with dielectric isolation Electricity 5 Active
US9502638B2 Method of manufacturing flexible piezoelectric structures Emerging Cross-Sectional Technologies 4 Active
US10211147B2 Metal-insulator-metal capacitors with dielectric inner spacers Electricity 4 Active
US10050125B1 Vertical-transport field-effect transistors with an etched-through source/drain cavity Electricity 4 Active
US9478663B2 FinFET device including a uniform silicon alloy fin Electricity 3 Active
US9099525B2 Blanket EPI super steep retrograde well formation without Si recess Electricity 3 Active
US9391140B2 Raised fin structures and methods of fabrication Electricity 3 Active
US9837268B2 Raised fin structures and methods of fabrication Electricity 2 Active
US10297675B1 Dual-curvature cavity for epitaxial semiconductor growth Electricity 1 Active
US10756184B2 Faceted epitaxial source/drain regions Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.