Surface nitridation in metal interconnects
US10068846B2 · kind B2 · utility
0Cited by
31References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2017 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Feb 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Conductive contacts include a first conductor disposed within a first dielectric layer, the first conductor having a recessed area in least one surface. A second dielectric layer is formed over the first dielectric layer, comprising a trench positioned over the first conductor. A second conductor is formed in the trench and the recessed area to form a conductive contact with the first conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.